SAMSUNG unveils Industry’s First 20nm-class NAND Flash Memory

Samsung Electronics has announced the industry's first production of 20 nanometer (nm) class NAND chips for use in Secure Digital (SD) memory cards and embedded memory solutions. Based on this cutting-edge technology, the introduction of 32 gigabit (Gb) MLC NAND will expand the company's memory card solutions for smart phones, high-end IT applications and high-performance memory cards.

Samsung's 20nm-class MLC NAND has a 50 percent higher productivity level than 30nm-class MLC NAND. The write performance of a 20nm-class-based, eight gigabyte (GB) and higher density, SD card is 30 percent faster than the 30nm-class NAND and it delivers a speed-class rating of 10 (read speed of 20MB/s, write speed of 10MB/s). By applying cutting-edge process, design and controller technology, Samsung also has secured reliability levels comparable to 30nm-class NAND.

Samsung Electronics first began producing 32Gb NAND with 30nm-class process technology in March 2009. Now it is shipping SD card samples to customers that are built with 20nm-class 32Gb NAND and will expand production later this year.

Samsung Memory cards based in the 20nm-class will be available from 4GB through 64GB densities.